Stephen E Saddow, Anant Agarwal's Advances in Silicon Carbide Processing and Applications PDF

By Stephen E Saddow, Anant Agarwal

ISBN-10: 1580537405

ISBN-13: 9781580537407

Study the newest advances in SiC (Silicon Carbide) know-how from the best specialists within the box with this new state of the art source. The booklet is your unmarried resource for in-depth details on either SiC equipment fabrication and system-level purposes. This entire reference starts with an exam of ways SiC is grown and the way defects in SiC progress can have an effect on operating units.

Key concerns in selective doping of SiC through ion implantation are coated with certain specialise in implant stipulations and electric activation of implants. SiC purposes mentioned contain chemical sensors, motor-control elements, high-temperature fuel sensors, and high-temperature electronics. via slicing during the arcane information and jargon surrounding the hype on SiC, this publication supplies a decent evaluate of today’s SiC expertise and exhibits you the way SiC should be followed in constructing tomorrow’s functions.

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IEEE, Vol. 60, 1972, p. 225. [13] Baliga, B. , J. Appl. , Vol. 53, 1982, p. 1759. [14] Berzelius, J. , Ann. , Vol. 1, 1824, p. 169. [15] Cowles, A. , and E. H. S. Patent 319945, 1885. [16] Acheson, A. , Engl. Patent 17911, 1892. [17] Knippenberg, W. , Philips Research Reports, Vol. 18, No. 3, 1963, pp. 161–274. [18] Frazier, B. , J. , 1893, p. 287. [19] Round, H. , Electrical World, Vol. 19, 1907, p. 309. [20] Lely, J. V, Vol. 32, 1955, p. 229. , W. J. Choyke, and D. R. Hamilton, Phys. Rev. A, Vol.

Very high growth rates and outstanding purity has been achieved using this technique. Growth rates between 15–50 µm/hr and background doping in the low 1013 cm−3 have been reported by Zhang et al. [54]. Typically, the temperatures used for growth are somewhat higher than those used in regular CVD, however, it need not be much higher. The high growth rates are obtained at higher temperatures as the dissociation of the Si clusters is more efficient. 6 Defects 21 Other groups have also worked on the same concept.

Have studied the stability of a Pt-thin oxide-SiC diode by repeatedly heating and cooling the device [79]. The stability of the I-V and C-V characteristics of the diode were good during exposure to an ambient of H2 (20%) or O2 (20%) at a temperature lower than 300°C. However, annealing for 6 hours at 600°C in air reduced the absolute value of the current, the capacitance, and the I-V gas sensitivity, and caused these to become unstable after this high-temperature annealing. Hunter et al. demonstrated palladium-gate SiC Schottky sensors, but a drift was experienced when the sensors were operated at 350°C for a period of several weeks [4].

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Advances in Silicon Carbide Processing and Applications by Stephen E Saddow, Anant Agarwal


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